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News 2018

Best Paper and Best Poster Awards

Two recent conference contributions from NaMLab received recognition as the best student paper and the best poster.

At this years International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2018) in Beijing, China, Melanie Herzig (PhD student at NaMLab) was honored with the Best Poster Award for the contribution "Improvement of the threshold switching characteristics of NbOx-based devices by engineering of the layer stack". This work experimentally investigates negative differential resistance effects in multi-layer capacitors using NbOx. These devices could be used for future implementation e.g. in cellular neural networks.

Furthermore, at this years Device Research Conference (DRC 2018) in Santa Barbara, California, the contribution entitled "Domain Formation in Ferroelectric Negative Capacitance Devices" by Michael Hoffmann (PhD student at NaMLab) was chosen for the Best Student Paper Award. In this work, the theoretical conditions for the occurrence of negative differential capacitance in ferroelectric materials when considering domain formation are discussed. These insights will be crucial in understanding how to improve the energy-efficiency of electronic devices beyond fundamental limits.

Long Night of Sciences 2018

On June 15th, 2018, 40 research institutes, companies and universities opened their laboratories and lecture halls.

FlyerIn NaMLab everybody got acquainted with material research for future electronics. The program offered visiting tours through laboratories, experimental shows in characterization methods for nano-scaled electronic devices, and measurements with modern microscopes.

 

MRS Bulletin & Webinar

NaMLab has contributed an article on ferroelectric hafnium oxide to the May issue 2018 of MRS Bulletin.

The article "Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors" has been published in the May 2018 issue of MRS Bulletin. It presents an overview on the history and current status of hafnium oxide based ferroelectrics for non-volatile memories and field-effect transistors. Additionally, applications beyond traditional ferroelectric memories are discussed.

Furthermore, a new MRS webinar on ferroelectric hafnium oxide is available on the NaMLab youtube channel: https://youtu.be/RplRkmUjU1A

New publications on ferroelectrics in 2018

From January to May 2018, new publications on ferroelectric HfO2 and negative capacitance with contributions from NaMLab have been published in international peer-reviewed journals.

From the many new NaMLab papers on ferroelectrics published in the last months, the majority is focused on the properties and applications of ferroelectric HfO2. The article "Interplay between ferroelectric and resistive switching in doped crystalline HfO2" was featured on Journal of Applied Physics and was highlighted in AIP Scilight. Furthermore, the article "On the stabilization of ferroelectric negative capacitance in nanoscale devices" was featured in the 2018 Nanoscale HOT Article Collection. The full list of new publications can be found below:

Title

Journal DOI

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

Advanced Materials Interfaces 10.1002/admi.201701258

Random Number Generation Based on Ferroelectric Switching

IEEE Electron Device Letters 10.1109/LED.2017.2771818

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

Nanoscale 10.1039/C7NR06342C

Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction

Advanced Electronic Materials 10.1002/aelm.201800091

Lanthanum-doped hafnium oxide: A robust ferroelectric material

Inorganic Chemistry 10.1021/acs.inorgchem.7b03149

Analysis of performance instabilities of Hafnia‐based ferroelectrics using modulus spectroscopy and thermally stimulated depolarization currents

Advanced Electronic Materials 10.1002/aelm.201700547

Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2

Advanced Electronic Materials 10.1002/aelm.201700489

Pyroelectricity of silicon-doped hafnium oxide thin films

Applied Physics Letters 10.1063/1.5023390

Interplay between ferroelectric and resistive switching in doped crystalline HfO2

Journal of Applied Physics 10.1063/1.5015985

Built-in Bias Generation in Anti-ferroelectric Stacks: Methods and Device Applications

IEEE Journal of the Electron Devices Society 10.1109/JEDS.2018.2825360

Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories

IEEE Transactions on Device and Materials Reliability 10.1109/TDMR.2018.2829112

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

Journal of Applied Physics 10.1063/1.5021746

On the relationship between field cycling and imprint in ferroelectric Hf0. 5Zr0. 5O2

Journal of Applied Physics 10.1063/1.5026424

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

Applied Physics Letters

10.1063/1.5030562

Ferroelectric negative capacitance domain dynamics Journal of Applied Physics 10.1063/1.5030072

On the stabilization of ferroelectric negative capacitance in nanoscale devices

Nanoscale 10.1039/C8NR02752H

 

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