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News 2017

ESSDERC 2017 Best Regular Paper Award

Namlab and TU Dresden authors were selected for the ESSDERC 2017 Best Regular Paper Award for a paper entitled “Anti-ferroelectric ZrO2: an enabler for Low Power Non-volatile 1T-1C and 1T Random Access Memories”, authored by M. Pešić, M. Hoffmann, C. Richter, S. Slesazeck, T. Kämpfe, L. M. Eng, T. Mikolajick and U. Schroeder

Abstract of the ESSDERC 2017 paper:

Recently, it was demonstrated that an asymmetric DRAM  capacitor  stack  can  introduce  non-volatility  and  at  the same time outperform ferroelectric HfO2  based FeRAM in terms of cycle endurance. With the present work, we provide an in-depth study of the underlying mechanisms and perform a comprehensive retention study that characterizes ferroelectric memories. Piezoelectric force microscopy is applied to prove the ultimate scalability of the proposed concept beyond capacitor based application. Finally, switching density plots reveal a much lower device to device variability and high switching uniformity with respect to ferroelectric HfO2 based films

MBE grown ultra-pure GaN

Our recent research highlighted in AVS April 2017 newsletter

AVS April 2017 Newletter: Want to Keep Oxygen Out of Your GaN Semiconductor? Study Says Turn Up the Heat

read more:

Journal of Vacuum Science & Technology B and  Science & Technology of Advanced Materials

Nanowire transistor

Back to the roots: Germanium outperforms silicon in energy efficient transistors with n-und p-conduction

NaMLab and cfaed reached an important breakthrough in the development of energy-efficient electronic circuits using transistors based on germanium

See also our press release

Novel High k Application Workshop 2017

NaMLab invites to the Novel High-k Application Workshop on March 9th and 10th, 2017. New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics will be discussed by more than 80 participants from industry, research institutes and universities. One main focus will be on the ferroelectric properties of HfO2.

NaMLab created with the workshop a stimulating platform for application-oriented scientist to exchange ideas and discuss latest experimental results on MIM-capacitors, process technology, leakage & reliability as well as characterization of high-k dielectrics integrated in silicon based micro– and nanoelectronics. The ferroelectric properties of doped HfO2 and ZrO2 were discovered 10 years ago. On the second day of the workshop, root causes for the formation of this so far unknown phase will be discussed.

More details:

Two-year report 2016/2017

The two-year report 2016/17 can be downloaded here.

The 2016/2017 report will give you a brief overview of our core competences and research topics similar to the results that are posted on this webpage.

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NaMLab gGmbH
Nöthnitzer Str. 64 a
01187 Dresden
Germany 

Phone: +49.351.21.24.990-00
Fax: +49.351.475.83.900

info (at) namlab.com

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