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News 2016

10th anniversary of Namlab

On August 19th, 2016, Namlab celebrated it's 10 year anniversary

The detailed program of the event is available here.











Annual Report 2014/2015

The annual report can be download here.

The annual report 2014/2015 will give you a brief overview of our core competences and research topics similar to the results that are posted on this webpage.

Join us at DKT2016

Invitation to the 1st German Czechoslovak Conference on Crystal Growth

On behalf of the German Association of Crystal Growth DGKK and Czechoslovak Association of Crystal Growth CSACG, we cordially invite you to the 1st German Czechoslovak Conference on Crystal Growth GCCCG-1 / DKT2016.

GCCCG-1 / DKT2016 will take place from March 15 to 18, 2016 in Dresden, Saxony.

The conference focuses on fundamental, applied and industrial aspects in the field of bulk growth as well as epitaxy of semiconductors, lasers and other optical materials.


Prof. Thomas Mikolajick, Namlab gGmbH, Dresden

Prof. Jörg Weber, TU Dresden

Dr. Gunter Gerbeth, HZDR, Dresden

Dr. Jochen Friedrich, Fraunhofer THM, Freiberg


Further information can be found here:

DKT-Webpage                                     Flyer DKT2016                                     Flyer jDGKK



DKT2016 / GCCCG-1
Phone: 03731-2033-121

Junge DGKK
Phone: 03731-2033-121

Long Night of Sciences

On June 10th, 2016, 37 research institutes, companies and universities opened their laboratories, lecture halls and offered a comprehensive program for the Long Night of Sciences in Dresden.

At NaMLab everybody got acquainted with material research for future electronics. The program offered visiting tours through the laboratories and experimental shows in characterization methods for nano-scaled electronic devices and measurements with modern microscopes. 



Nanowire Anodes for Batteries

Silicon nanowire-carbon anodes enable long cycling stability in Lithium Sulfur batteries

Lithium-sulfur (Li/S) batteries are pointed out as one of the most promising systems for advanced applications in automotive energy storage. High area capacity Li/S full-cells with balanced electrodes to address high power electro-mobile applications with energy densities of up to 410 Wh/kg for all active components has just been reported in the Nature journal Scientific Reports. The work is the result of a collaborative work between researchers of NaMLab gGmbH, Fraunhofer IWS, TU Dresden and Leibniz IFW. The special anode is made of an assembly comprising silicon nanowires as active material conformally grown on a 3D carbon mesh as a light-weight current collector, offering extremely high areal capacity for reversible Li storage of up to 9 mAh/cm2. In contrast to metallic Li, the presented system with SiNW anode exhibits superior characteristics in Li/S batteries such as safe operation, long cycle life and simple handling. Find out more in the open access article following this link:

Novel High k Application Workshop 2016

In collaboration with the EU COST networking project HerALD, NaMLab invites to the Novel High-k Application Workshop on March 14th and 15th, 2016.

New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics will be discussed by more than 80 participants from industry, research institutes and universities. NaMLab created with the workshop a stimulating European platform for application-oriented scientist to exchange ideas and discuss latest experimental results on MIM-capacitors, process technology, leakage & reliability as well as characterization of high-k dielectrics integrated in silicon based micro– and nanoelectronics. In addition, new results in the field of ALD dielectrics in solar cells, tranparent conduction oxides (TCOs) and atomic layer etching (ALE) will be discussed.

see more details including preliminary agenda

Paper on Negative Capacitance in Hafnia

For the first time, a direct measurement of negative capacitance in polycrystalline HfO2-based thin films is reported. Decreasing voltage with increasing charge transients are observed in 18 and 27 nm thin Gd:HfO2 capacitors in series with an external resistor.

To further reduce the power dissipation in nanoscale transistors, the fundamental limit posed by the Boltzmann distribution of electrons has to be
overcome. Stabilization of negative capacitance in a ferroelectric gate insulator can be used to achieve this by boosting the transistor gate voltage.
Up to now, negative capacitance is only directly observed in polymer and perovskite ferroelectrics, which are incompatible with semiconductor manufacturing. Recently discovered HfO2-based ferroelectrics, on the other hand, are ideally suited for this application because of their high scalability and semiconductor process compatibility. Here, for the first time, a direct measurement of negative capacitance in polycrystalline HfO2-based thin films is reported. Decreasing voltage with increasing charge transients are observed in 18 and 27 nm thin Gd:HfO2 capacitors in series with an external resistor. Furthermore, a multigrain Landau–Khalatnikov model is developed to successfully simulate this transient behavior in polycrystalline ferroelectrics with nucleation limited switching dynamics. Structural requirements for negative capacitance in such materials are discussed. These results demonstrate that negative capacitance effects are not limited to epitaxial ferroelectrics, thus significantly extending the range of potential applications.

Link to paper:


Paper on solar cell passivation

Al2O3 nanolayers grown by ALD contain negative fixed charges. Electrical measurements on slant-etched layers reveal that these charges are located within 1 nm distance to the interface with the Si substrate.

When inserting additional interface layers, the fixed charge density can be continuously adjusted from 3.5·1012 cm‑2 (negative polarity) to zero and up to 4.0·1012 cm‑2 (positive polarity). An HfO2 interface layer of one monolayer or more reduces the negative fixed charges in Al2O3 to zero. Based on the good passivation properties of this charge-free HfO2/Al2O3 stack, negative or positive fixed charges can be formed by introducing additional thin Al2O3 or SiO2 layers between the Si substrate and this HfO2/Al2O3 capping layer. All stacks provide very good passivation of the silicon surface. The measured effective carrier lifetimes are between 1 and 30 ms. This charge control in Al2O3 nanolayers allows the construction of zero fixed charge passivation layers as well as layers with tailored fixed charge densities for future solar cell concepts and other field-effect based devices.

Two Presentations at IEDM 2016

At this years Internation Electron Devices Meeting (IEDM) in San Francisco (Dec 3-7, 2016), Namlab will co-author two presentations in the 'Charged Based Memory Session'.

Tuesday, December 6, 11:10 AM

How to Make DRAM non-volatile? Anti-ferroelectrics: A New Paradigm for Universal Memories,

M. Pesic, S. Knebel, M. Hoffmann, C. Richter, T. Mikolajick and U. Schroeder, NaMLab gGmbH

We propose a simple way how non-volatility can be achieved in state-of-the-art ZrO2 based DRAM stacks. By employing electrodes with different workfunction values, a built-in bias is introduced within the dielectric stack to modify the anti-ferroelectric property of ZrO2 from standard volatile to non-volatile behavior with high endurance strength.

A paper describing the basic concept was published as a Adv. Funct. Material paper DOI: 10.1002/adfm.201603182


Positive feedback on the talk by FORBES

'Ferro-electric devices were discussed in a few papers. A interesting papers from researchers in Germany discussed how common materials used in manufacturing DRAM today could be used to create a non-volatile DRAM. It turns out that a ZrO2 layer commonly used is an anti-ferroelectric. By changing the internal bias in the DRAM two stable non-volatile states can be created in the anti-ferroelectric layer. These states can be used to make a non-volatile version of DRAM. This would be a very interesting angle on a very mature process, and if it could be scaled successfully, would give some of the emerging memories a run for their money.'



Tuesday, December 6, 10:45 AM
A 28nm HKMG Super Low Power Embedded NVM Technology Based on Ferroelectric FETs,

M. Trentzsch, S. Flachowsky, R. Richter, J. Paul, B. Reimer, D. Utess, S. Jansen, H. Mulaosmanovic*, S. Müller*, S. Slesazeck*, J. Ocker*, M. Noack*, J. Müller**, P. Polakowski**, J. Schreiter***, S. Beyer, T. Mikolajick^ and B. Rice, GLOBALFOUNDRIES Fab1, * NaMLab gGmbH, ** Fraunhofer IPMS, *** Racyics GmbH, ^ TU Dresden

A ferroelectric field effect transistor (FeFET) based eNVM was successfully implemented into a 28nm HKMG 28SLP CMOS platform. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention is demonstrated and endurance up to 100.000 cycles was achieved.

see also IEDM website:


NaMLab gGmbH
Nöthnitzer Str. 64 a
01187 Dresden

Phone: +49.351.21.24.990-00
Fax: +49.351.475.83.900

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