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News 2019

Book on ferroelectric HfO2 published

The first comprehensive book on ferroelectric HfO2 is now available including significant contributions from NaMLab.

Ferroelectricity in Doped Hafnium Oxide covers all aspects related to the structural and electrical properties of semiconductor devices, and the implementation of ferroelectric HfO2- and ZrO2-based thin films into these devices, including a comparison to standard ferroelectric materials. Ferroelectric and field-induced ferroelectric properties are considered promising for various applications, including non-volatile memories, ferroelectric field-effect-transistors, energy storage and harvesting, and solid-state cooling.

The book can be ordered through the following link (including preview Google books/Science Direct):

https://www.elsevier.com/books/ferroelectricity-in-doped-hafnium-oxide/schroeder/978-0-08-102430-0

DGKK 2019

The Chair for Nanoelectronic Materials and the NaMLab gGmbH are pleased to host the 2019 DGKK workshop on epitaxy of III-V compounds on Dec 5th and 6th, 2019 in the Penck Hotel, Dresden.

We would like to continue the past successful meetings (Paderborn 2018, Freiburg 2017 and Duisburg 2016).

This workshop is aimed at researchers to exchange their latest experiences and results regarding the epitaxy of III-V compounds (see Scope/Topics).

We cordially invite everyone to the 2019 workshop to share their newest scientific results, technical innovations or specific problems/solutions concerning the growth and characterization of III-V compounds with colleagues in the community.

You can find further information, e.g. regarding venue/time of the workshop, registration, abstract submission, industry exhibition and sponsorship opportunities on this web page.

High k Workshop 2020

Save the Date: March 31th and April 1st, 2020 - NaMLab invites to the next Novel High-k Application Workshop in March 2020. New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics were discussed by more than 100 participants from industry, research institutes and universities.

In this series of annual workshops NaMLab has created a stimulating platform for application-oriented scientists to exchange ideas and discuss latest experimental results on MIM-capacitors, process technology, leakage & reliability as well as characterization of high-k dielectrics integrated in silicon based micro– and nanoelectronics. The ferroelectric properties of doped HfO2 and ZrO2 were discovered more than 10 years ago. On the second day of the workshop, root causes for the formation of this so far unknown phase will be discussed together with the application of these films.

Where: MPI PKS, Noethnitzer Strasse 38, Dresden

When: March 31th and April 1st, 2020   9 am - 5 pm

 

Thank you for the support by:

Oxford

3eFerro

 

Confirmed list of invited speakers:

Min Hyuk Park                                                   Pusan National University, Korea

Laurent Grenouillet                                            LETI Grenoble, France

Jacob Jones/Alex Hsain                                    North Carolina State University, Raleigh, NC, USA

Igor Stolitchnov/Carlotta Gastaldi                      EPFL Lausanne, Switzerland

Bertrand Vilquin/Jordan Bouaziz                       École centrale de Lyon, France

Nick Barrett/Wassim Hamouda                         CEA Saclay, Paris, France

Florencio Sanchez                                            ICMAB, Barcelona, Spain

Pavan Nukala/Yingfen Wei                               Univ. of Groningen, Netherlands

Ulrich Böttger/Fenja Berg                                  RWTH Aachen, Germany

Alfred Kersch/Max Falkowski                            University of Applied Sciences Munich, Germany

Johannes Heitmann                                          TUBA Freiberg, Germany

Wenke Weinreich                                              FhG IPMS Dresden, Germany

Martin Ziegler                                                    TU Ilmenau, Germany

Christian Wenger                                              IHP Frankfurt/Oder, Germany

Martina Müller                                                   FZ Jülich, Germany

 

 

 

High-k Workshop 2019

NaMLab invited to the Novel High-k Application Workshop on June 11th and 12th, 2019. New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics were discussed by more than 100 participants from industry, research institutes and universities. Thank you for coming to Dresden.

In this series of annual workshops NaMLab has created a stimulating platform for application-oriented scientists to exchange ideas and discuss latest experimental results on MIM-capacitors, process technology, leakage & reliability as well as characterization of high-k dielectrics integrated in silicon based micro– and nanoelectronics. The ferroelectric properties of doped HfO2 and ZrO2 were discovered more than 10 years ago. On the second day of the workshop, root causes for the formation of this so far unknown phase will be discussed together with the application of these films.

When: Jun 11, 2019 08:00 AM to Jun 12, 2019 06:00 PM

Where: MPI PKS, Noethnitzer Strasse 38, Dresden

Agenda overview: June 11th and 12th

 

Thank you for the support by:

 

Oxford

3eFerro

IEDM 2019

The following presentations by Namlab co-authors were excepted for the upcoming IEEE International Electron Devices Meeting (IEDM) 2019 in San Franzisco on December 7-11.

Session 15 - Memory Technology - Ferroelectrics
Tuesday, December 10, 9:00 a.m.

9:05 AM 15.1 Material Perspectives of HfO2-based Ferroelectric Films for Device Applications
Akira Toriumi, Lun Xu, Yuki Mori, Xuan Tian, Patrick Lomenzo, Halid Mulaosmanovic, Monica
Materano, Thomas Mikolajick, Uwe Schroeder, The University of Tokyo, TU-Dresden
This paper gives material fundamentals and new insights to ferroelectric HfO2 for device applications. The
key role of dopants, effects of the interface on ferroelectric phase, and a detailed discussion of switching
kinetics are of central focus. Based on them, we discuss opportunities of ferroelectric HfO2 for device
applications.

11:10 AM 15.5 Next Generation Ferroelectric Memories Enabled by Hafnium Oxide (Invited)
Thomas Mikolajick, Uwe Schroeder, Patrick Lomenzo, Evelyn Breyer, Halid Mulaosmanovic, Michael
Hoffmann, Terence Mittmann, Furqan Mehmood, Benjamin Max, Stefan Slesazeck, NaMLab gGmbH,
Technische Universtität Dresden
Ferroelectrics are an ideal solution for low write power nonvolatile memories. The complexity of
ferroelectric perovskites has hindered the scaling. Ferroelectricity in hafnium oxide solved this issue
making ferroelectric memories in its three variants, ferroelectric RAM, ferroelectric field effect transistors
and ferroelectric tunneling junctions interesting for future memory solutions again.

12:00 PM 15.7 Demonstration of BEOL-Compatible Ferroelectric Scaled Hf0.5Zr0.5O2 FeRAM
Co-Integrated with 130nm CMOS for Embedded NVM Applications

Terry Francois, Laurent Grenouillet, Jean Coignus, Philippe Blaise, Catherine Carabasse, Nicolas
Vaxelaire, Thomas Magis, François Aussenac, Virginie Loup, Catherine Pellissier, Stefan Slesazeck,
Viktor Havel, Claudia Richter, Adam Makosiej, Bastien Giraud, Evelyn Breyer, Monica Materano, Philippe
Chiquet, Marc Bocquet, Etienne Nowak, Uwe Schroeder, Fred Gaillard, CEA-Leti, NaMLab gGmbH, Aix-
Marseille Université
We demonstrate scalability of HZO capacitors down to 300nm by co-integrating them for the first time in
Back-End-Of-Line of 130nm CMOS technology. Excellent performance are reported: 2.PR >40μC/cm²,
endurance >1011, switching speeds <100ns, operating voltages <4V, and data retention at 125°C paving the
way towards <10fJ/bit ultra-low power FeRAM for IoT applications.

 

Session 38 - Memory Technology - Memory for Neural Network

Wednesday, December 11, 1:30 p.m.

3:40 PM 38.6 A 2TnC Ferroelectric Memory Gain Cell Suitable for Compute-in-memory and Neuromorphic Application

Stefan Slesazeck, Taras Ravsher, Viktor Havel, Evelyn Breyer, Halid Mulaosmanovic, Thomas Mikolajick, NaMLab gGmbH, TU Dresden

A 2TnC ferroelectric memory gain cell is proposed, that can be operated either in FeRAM or FTJ mode. The internal gain of the cell mitigates the need for 3D integration of the FeCAPs, making the concept very attractive for embedded memories, compute-in-memory and neuromorphic applications.

NaMLab paper published in Nature

Researchers from NaMLab have verified a fundamental theory of ferroelectric materials which could lead to more energy-efficient electronics.

Scientists at NaMLab, in collaboration with researchers at Dresden University of Technology and the National Institute of Materials Physics, Romania, have demonstrated that thin layers of ferroelectric hafnium zirconium oxide can exhibit a phenomenon called “negative capacitance”. This means that such materials can amplify a voltage, which could be used to reduce the power dissipation of future electronics beyond conventional limits. While this peculiar behavior was already predicted over 70 years ago, until now, most scientists thought that it was impossible to show this experimentally. Since the materials used in this study can already be found in every advanced computer chip today, future products utilizing this new discovery, e.g. more efficient smartphones or computers, might not be far away.

While ferroelectric materials have been thoroughly investigated for almost a century, some fundamental questions have remained unresolved. One of them is related to the “Landau theory” of ferroelectrics from the 1940s, which is still used to describe the behavior of ferroelectric materials today. However, the theory also predicts a negative capacitance, which has been controversially discussed, especially in recent years. The theory suggests that an increase of electric charge can lead to a decrease of the voltage, which is exactly opposite to a regular capacitance. A scientist at NaMLab gGmbH has now first demonstrated a measurement of such a negative capacitance in exceptional agreement with Landau theory.

This discovery was enabled by using specially fabricated capacitors, consisting of a stack of ultrathin layers, to which extremely short voltage pulses were applied. The results have been published on January 14, 2019 in the prestigious journal Nature. “The fascinating thing is that the materials in which we discovered this promising effect are already used in every smartphone,” said Michael Hoffmann, Ph.D. student at NaMLab and lead author of the study. “However, the next important step will be to use these findings to develop new devices, which in theory could be much more energy-efficient than anything that is possible today.”

The scientific publication can be found online under:

http://dx.doi.org/10.1038/s41586-018-0854-z

New Publications from NaMLab

New research from NaMLab has been published in peer-reviewed scientific journals.

The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals in the past months. If already available, the digital object identifier (DOI) and a link to the paper is given below:

Title Journal DOI
Local Structural Investigation of Hafnia-Zirconia Polymorphs in Powders and Thin Films by Extended X-ray Absorption Spectroscopy Acta Materialia

https://doi.org/10.1016/j.actamat.2019.09.003

Origin of the Large Remanent Polarization in La:HfO2 Advanced Electronic Materials Accepted for publication
Negative Capacitance for Electrostatic Supercapacitors Advanced Energy Materials https://doi.org/10.1002/aenm.201901154
Fluid imprint and inertial switching in ferroelectric La:HfO2 capacitors ACS Applied Materials & Interfaces https://doi.org/10.1021/acsami.9b11146
Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors Advanced Materials Interfaces https://doi.org/10.1002/admi.201901180
Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance IEEE Transactions on Electron Devices 10.1109/TED.2019.2930749
Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect Microelectronics Journal https://doi.org/10.1016/j.mejo.2019.07.011
Origin of ferroelectric phase in undoped HfO2 films deposited by sputtering Advanced Materials Interfaces https://doi.org/10.1002/admi.201900042

 

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