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High k Workshop 2014

When Mar 24, 2014
from 09:00 AM to 05:00 PM
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The Novel High k Application Workshop took place:

Monday March 24, 2014 - 9am to 5pm @ Hörsaal TU Dresden Fakultät Informatik

Agenda of the Workshop:

Time

Presenter

Institute

Title of Presentation

 

 

 

 

10:00

D. Zhou/U. Schroeder

Dalian University/Namlab

Welcome

 

Prof. L. Chen

Chinesisch-Deutsches Zentrum für Wissenschaftsförderung

 

 

 

 

 

Device Performance and Reliability

chair: U. Schroeder

10:15

J. Schubert

FZ Jülich

Future gate dielectric materials

10:35

E. Erben

GlobalFoundries/CNT

Surface treatments for enhanced reliability in 28nm HKMG

10:55

S. Slesazeck

Namlab, Dresden

Impact of charges and trapping on time dependent dielectric breakdown

11:15

H. Knoops

Oxford/TU Eindhoven

Plasma-assisted ALD of silicon oxide and silicon nitride for gate spacer applications

 

 

 

 

 

Coffee break: 11:35 - 11:55h

 

 

 

 

 

 

11:55

M. Rommel

FhG ISSB Erlangen

Nanoscale characterization of high-k dielectrics by electrical SPM methods

 

HfO2 based Ferroelectrics - Basics

chair: S. Slesazeck

12:15

U. Schroeder

Namlab, Dresden

Overview of electric field cycling behavior  of ferroelectric doped HfO2

12:35

J. Sundqvist

Fraunhofer IPMS- CNT

Potential of an ALD compatible ferroelectric

 

 

 

 

 

Lunch - MPI: 12:55 - 14:15h

 

 

       

 

HfO2 based Ferroelectrics - Reliability

chair: U. Schroeder

14:15

Dayu ZHOU

Dalian University, Dalian

Reliability Characteristics of Si-doped HfO2 ferroelectric thin films

14:35

Fei YE

Dalian University, Dalian

The origin of Structure and spontaneous polarization of hafnia

14:55

Jun ZHU

University of Electronic
Science and Technology, Chengdu

The effects of Hf doping on the electrical properties of ferroelectric films

15:15

S. Starschich

RWTH Aachen IWE

Switching behaviour of CSD based doped HfO2

15:35

A. Kersch

Hochschule München

Effects of defects on phase stability of ferroelectric HfO2, ZrO2 from ab initio simulation

 

 

 

 

 

Coffee break: 15:55 - 16:15h

 

 

 

 

 

 

 

Dielectrics in High Fields

 

chair: T. Mikolajick

16:15

P. Calka

IHP Frankfurt/O

Advanced HfO2-based RRAM: From materials to integrated devices

16:35

U. Böttger

RWTH Aachen IWE

cancelled

16:35

Xianhua WEI

Southwest University,
Sichuan

Tuning of resistive switching behavior by oxygen defect in complex perovskite oxides

16:55

Huizhong ZENG

University of Electronic
Science and Technology, Chengdu

Nanoscale characterization of resistive switching of ferroelectric thin films

17:15

T. Mikolajick

Namlab, Dresden

Resistive Switching - From Basic Switching Mechanism to Device Applications

 

 

 

 

17:35

End

 

 

Contact

NaMLab gGmbH
Nöthnitzer Str. 64 a
01187 Dresden
Germany 

Phone: +49.351.21.24.990-00
Fax: +49.351.475.83.900

info (at) namlab.com

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