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NaMLab invites to the Novel High-k Application Workshop on March 9th and 10th, 2017. New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics will be discussed by more than 80 participants from industry, research institutes and universities. One main focus will be on the ferroelectric properties of HfO2.
At this years Internation Electron Devices Meeting (IEDM) in San Francisco (Dec 3-7, 2016), Namlab will co-author two presentations in the 'Charged Based Memory Session'.
For the first time, a direct measurement of negative capacitance in polycrystalline HfO2-based thin films is reported. Decreasing voltage with increasing charge transients are observed in 18 and 27 nm thin Gd:HfO2 capacitors in series with an external resistor.
The annual report can be download here.